— The new inverter will be installed in Toyota’s new BEV “LEXUS RZ” — DENSO CORPORATION has decided to adopt silicon carbide epitaxial wafer for power semiconductor (SiC epi-wafer) manufactured by Resonac Corporation (Tokyo: 4004) (President: Hidehito Takahashi) with the aim of using it as material for driver element of DENSO’s new inverter.  This inverter […]

— Through supply of top-quality epitaxial wafers, Resonac contributes to practical application of space-saving high-output next-generation power semiconductors — Resonac Corporation (Tokyo: 4004, President: Hidehito Takahashi) has developed a third generation of high-grade silicon carbide (SiC) epitaxial wafer (HGE-3G) for power semiconductors and has started to mass-produce it.  HGE-3G has quality superior to that of […]

Resonac Corporation (Resonac) (President: Hidehito Takahashi) has concluded new multiyear contracts with Infineon Technologies AG (Infineon), a German semiconductor manufacturer providing power semiconductors worldwide, to continue supplying SiC materials for power semiconductors to Infineon and cooperatively developing technologies related to SiC materials.  Resonac concluded these new contracts in order to complement and expand the preceding […]